Ultrathin Boron Nitride Makes Perovskite QLEDs Far More Stable in ssalimpour

Salimpour Website |Researchers showed that an ultrathin, nanolayered boron nitride interlayer can improve the stability of perovskite quantum dot LEDs by passivating defects, suppressing ion migration, and enhancing heat dissipation. BN-optimized devices achieved an average peak EQE of 30.

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Ultrathin Boron Nitride Makes Perovskite QLEDs Far More Stable

Ultrathin Boron Nitride Makes Perovskite QLEDs Far More Stable

Researchers showed that an ultrathin, nanolayered boron nitride interlayer can improve the stability of perovskite quantum dot LEDs by passivating defects, suppressing ion migration, and enhancing heat dissipation. BN-optimized devices achieved an average peak EQE of 30.05% and a measured T50 lifetime of 102 hours at 2,000 cd m-2, with accelerated testing projecting a T50 of 25,263 hours at 100 cd m-2.