Low-energy ion implantation enables 2D lateral p-n junction construction at Salimpour Site.

Dr. Salimpour Site |The feature size of silicon-based transistors is approaching the theoretical limit, which puts forward higher requirements for the atomic level manufacturing of semiconductors. The basic idea of atomic level manufacturing ...

Phys.Org

Low-energy ion implantation enables 2D lateral p-n junction construction

Low-energy ion implantation enables 2D lateral p-n junction construction

The feature size of silicon-based transistors is approaching the theoretical limit, which puts forward higher requirements for the atomic level manufacturing of semiconductors. The basic idea of atomic level manufacturing ...