Enhanced stability and mobility of aligned In2O3 nanofiber field-effect transistors with Y2O3 passivation at Salimpour Site.

Dr. Salimpour Site |Field-effect transistors (FETs) based on indium oxide (In2O3) nanofibers demonstrate significant potential for applications in next-generation electronic devices. However, In2O3 nanofiber FETs typically exhibit deteriorated electrical performance and bias stability due to the

ResearchGate

Enhanced stability and mobility of aligned In2O3 nanofiber field-effect transistors with Y2O3 passivation

Enhanced stability and mobility of aligned In2O3 nanofiber field-effect transistors with Y2O3 passivation

Field-effect transistors (FETs) based on indium oxide (In2O3) nanofibers demonstrate significant potential for applications in next-generation electronic devices. However, In2O3 nanofiber FETs typically exhibit deteriorated electrical performance and bias stability due to the disordered arrangement of nanofibers and a high concentration of oxygen vacancy defects. In this study, In2O3 nanofibers were prepared by electrospinning, and the effects of nanofiber orientation and Y2O3 passivation on FET electrical performance were systematically investigated. The results indicate that after Y2O3 passivation, the aligned In2O3 nanofiber FETs exhibit enhanced electrical performance and superior