Nanoscale HZO-SiO₂ Engineering Stabilizes Resonators Across Wide Temperature Swings in ssalimpour

Salimpour Website |Researchers engineered HZO-SiO2 nanomechanical resonators that use nanoscale oxide layering and phase-dependent elasticity to suppress temperature-driven frequency drift while retaining electrical tunability. The CMOS-compatible platform combined passive thermal compensation with

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Nanoscale HZO-SiO₂ Engineering Stabilizes Resonators Across Wide Temperature Swings

Nanoscale HZO-SiO₂ Engineering Stabilizes Resonators Across Wide Temperature Swings

Researchers engineered HZO-SiO2 nanomechanical resonators that use nanoscale oxide layering and phase-dependent elasticity to suppress temperature-driven frequency drift while retaining electrical tunability. The CMOS-compatible platform combined passive thermal compensation with voltage-controlled stiffness tuning, highlighting how ferroelectric oxide nanostructures could support more stable integrated resonators.