Plasma-Engineered TiN Cuts Switching Voltage in Ultrathin Ferroelectric Memory Capacitors in ssalimpour

Salimpour Website |Researchers used plasma-engineered, (111)-textured TiN electrodes with nitrogen-rich, oxidation-resistant surfaces to reduce interfacial oxidation and lower the switching voltage of 5 nm Hf0.5Zr0.5O2 ferroelectric capacitors. The devices achieved saturated switching at 0.

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Plasma-Engineered TiN Cuts Switching Voltage in Ultrathin Ferroelectric Memory Capacitors

Plasma-Engineered TiN Cuts Switching Voltage in Ultrathin Ferroelectric Memory Capacitors

Researchers used plasma-engineered, (111)-textured TiN electrodes with nitrogen-rich, oxidation-resistant surfaces to reduce interfacial oxidation and lower the switching voltage of 5 nm Hf0.5Zr0.5O2 ferroelectric capacitors. The devices achieved saturated switching at 0.6 V, doubled remanent polarization to 31.5 µC/cm², showed no hard electrical breakdown through 10^12 bipolar cycles, and yielded sub-ns to low-ns switching when the measured area dependence was extrapolated to DRAM-relevant footprints.